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| SEMICONDUCTOR TECHNICAL DATA Protection in Portable Electronics Applications. PG05DBTFC TVS Diode for ESD Protection in Portable Electronics FEATURES 50 Watts peak pulse power (tp=8/20 s) Transient protection for data lines to IEC 61000-4-2(ESD) 15kV(Air), 8kV(Contact) IEC 61000-4-4(EFT) 40A(tp=5/50ns) IEC 61000-4-5(Lightning) 5A(tp=8/20 s) Bidirectional Type Pin Configuration Structure. Small package for use in portable electronics. Suitable replacement for Multi-Layer Varistors in ESD protection applications. Protects one I/O or power line. 2 CATHODE MARK 1 D C B A DIM A B C D E F E MILLIMETERS _ 1.00 + 0.05 0.80+0.10/-0.05 _ 0.60 + 0.05 _ 0.30 + 0.05 0.40 MAX _ 0.13 + 0.05 Low clamping voltage. Low leakage current. 1. ANODE 2. ANODE F APPLICATIONS Cell phone handsets and accessories. Microprocessor based equipment. Personal digital assistants (PDA's) Notebooks, desktops, & servers. Portable instrumentation. Pagers peripherals. TFSC Marking MAXIMUM RATING (Ta=25 CHARACTERISTIC Peak Pulse Power (tp=8/20 s) Junction Temperature Storage Temperature ) PPK Tj Tstg 50 -55 150 -55 150 2 1 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Junction Capacitance ) TEST CONDITION It=1mA VRWM=3V VRWM=5V VR=0V, f=1MHz MIN. 5.8 TYP. 15 MAX. 5 7.8 70 5 UNIT V V nA A pF SYMBOL VRWM VBR IR CJ 2005. 6. 24 Revision No : 2 6 SYMBOL RATING UNIT 2 1 1/1 PG05DBTFC NON-REPETITIVE PEAK PULSE POWER VS. PULSE TIME POWER DERATION CURVE 110 RATED POWER OR IPP (%) 100 90 80 70 60 50 40 30 20 10 0 0 25 50 75 1K PEAK PULSE POWER P PP (KW) Peak Pulse Power 8/20us 100 Average Power 10 1 10 PULSE DURATION TP (s) 100 100 125 150 AMBIENT TEMPERATURE Ta ( C) PULSE WAVEFORM 110 PEAK PULSE CURRENT I PP (%) 100 90 80 70 60 50 40 30 20 10 0 0 5 10 15 TIME (s) 20 25 30 Waveform Parameters : tr=8s td=20s e -t td=lpp/2 2005. 6. 24 Revision No : 2 2/2 |
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